dm t6017lss document number: d s 38852 rev. 1 - 2 1 of 6 www.diodes.com may 2016 ? diodes incorporated dm t6017 lss new product advance information advanced information 60v n - channel enhancement mode mosfet product summary b v dss r ds(on) m ax i d m ax t a = + 25c 60 v 18 m? @ v gs = 10 v 9.2 a 23 m? @ v gs = 4.5 v 8 a description and applications this mosfet is designed to minimize the on - state resistance (r ds (on ) ) and maintain superior switching performance, making it ideal for high efficiency power management applications. ? load switch ? adaptor switch ? notebook pc features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: so - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0. 076 grams ( a pproximate) ordering information (note 4 ) part numbe r case packaging dm t60 1 7 l ss - 13 so - 8 2500 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorpora teds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compou nds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html . marking information so - 8 d s g equivalent circuit pin1 d s s s g d d d pin - o ut t op view t op view = manufacturers marking t601 7 ls e3 1 4 8 5 n 3016 ls ww yy 1 4 8 5 n 3016 ls ww yy
dm t6017lss document number: d s 38852 rev. 1 - 2 2 of 6 www.diodes.com may 2016 ? diodes incorporated dm t6017 lss new product advance information advanced information maximum ratings (@ t a = +25c, unless otherwise spe cified.) characteristic symbol value unit drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25 c t a = + 70 c i d 9.2 7.4 a t<10s t a = + 25 c t a = + 70 c i d 11.9 9.5 a continuous d rain current (note 6 ) v gs = 4.5 v steady state t a = + 25 c t a = + 70 c i d 8 6. 5 a t<10s t a = + 25 c t a = + 70 c i d 10 8.1 a pulsed drain curren t ( 10 dm 60 a maximum continuous body diode f orward current (note 6 ) i s 2 a avalanche current (note 7) l = 0.1mh i as 15.3 a avalanche energy (note 7) l = 0.1mh e as 11.7 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 1.5 w thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 85 c/w t<10s 45 c/w total power dissipation (note 6 ) p d 2. 1 w thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 74 c/w t<10s 37 c/w thermal resistance, junction to case r ? j c 13 c/w operating and storage temperature range t j, t stg - 5 5 to + 15 0 c electrical characteristics (@ t a = +25c, unless otherwise specified.) charac teristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 60 gs = 0v, i d = 250 a zero gate voltage drain current i dss ds = 48 v , v gs = 0v gate - source leakage i gss gs = ? ds = 0v on characteristics (note 8 ) gate threshold voltage v gs (th) 1 ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) gs = 10 v, i d = 10 a gs = 4.5 v, i d = 6 a diode forward voltage v sd g s = 0v, i s = 1 a dynamic characteristics (note 9 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1m hz total gate charge ( v gs = 4.5 v ) q g ? ds = 30 v, i d = 10 a total gate charge ( v gs = 10 v ) q g gs gd d( on ) gs = 10 v , v ds = 30 v , r g = 6 d = 10 a turn - on rise time t r d( off ) f rr f = 10 a, di/dt = 10 0a/ s reverse recovery charge q rr notes: 5 . device mounted on fr - 4 pc board , with minimum recommended pad layout, single sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 7 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm t6017lss document number: d s 38852 rev. 1 - 2 3 of 6 www.diodes.com may 2016 ? diodes incorporated dm t6017 lss new product advance information advanced information v , gate - source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 3 6 9 12 15 18 21 24 27 30 1.5 2 2.5 3 3.5 4 4.5 5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = - 55c a i d , drain current (a) i , d rain current (a) d figure 4 typical on - resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.005 0.01 0.015 0.02 0.025 0 2 4 6 8 10 12 14 16 18 20 t = - 55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs r ds(on) , drain - source on - resistance ( ? v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 30.0 0 1 2 3 4 5 v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 10v gs v = 4.0v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0 3 6 9 12 15 18 21 24 27 30 v = 4.5v gs v = 10v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 6a gs d v = v i = 10a gs d 10 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 6a gs d v = v i = 10a gs d 10
dm t6017lss document number: d s 38852 rev. 1 - 2 4 of 6 www.diodes.com may 2016 ? diodes incorporated dm t6017 lss new product advance information advanced information t , junction temperature ( c) figure 7 gate threshold variation vs. temperature j ?? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source - drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 150c a 0 3 6 9 12 15 18 21 24 27 30 0 0.3 0.6 0.9 1.2 1.5 t = 125c a t = 25c a t = - 55c a t = 85c a i s , source current (a) v , drain - sourc e voltage (v) ds figure 9 typical drain - source leakage current vs. voltage i , d r a i n l e a k a g e c u r r e n t ( n a ) d s s 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 t = 25c a t = 85c a t = 125c a t = 150c a i dss , drain leakage current ( n a) v , drain - source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d t = 150c t = 25c v = 10v singl e pulse j(max) a gs dut on 1 * mrp board r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d , drain current (a) v gs(th) , gate threshold voltage (v) v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c iss c oss c rss f = 1mhz q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 v = 30v i = a ds d 10
dm t6017lss document number: d s 38852 rev. 1 - 2 5 of 6 www.diodes.com may 2016 ? diodes incorporated dm t6017 lss new product advance information advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. dimensions value (i n mm) x 0.60 y 1.55 c1 5.4 c2 1.27 so - 8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ? ? ? ? r ja (t) = r(t)* r ja r ja = 85 o c/w duty cycle, d = t1/t2 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 85 C /w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 x c1 c2 y
dm t6017lss document number: d s 38852 rev. 1 - 2 6 of 6 www.diodes.com may 2016 ? diodes incorporated dm t6017 lss new product advance information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this do cument and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trade mark rights, nor the rights of others. any customer or user of this document or products described herein in such applicatio ns shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represent ed on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes inc orporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may al so be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative for mat released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions fo r use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - r elated information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critic al, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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